(DURIP) ENABLING RADIATION TESTING OF ADVANCED ELECTRONIC-PHOTONIC INTEGRATED CIRCUITS
Abstract
This proposal describes instrumentation that will extend and enhance the work performed by students and researchers under an existing and future AFOSR programs at Vanderbilt University. The overall purpose of the research is to develop, via experimentation and theory, knowledge and tools that will guide development of future radiation-hardened electronics. Our AFOSR Program Officer is Dr. Ken Goretta, and he should be the principal recipient of this proposal. Vanderbilt University’s Institute for Space and Defense Electronics is a principal investigator of an AFOSR/HiRev program entitled “Physics of Failure and Radiation Effects in Emerging Electronic Materials and Devices in Space Applications” (contract number: FA9550-17-1-0046, PI: Ron Schrimpf). Under this program the Vanderbilt research team is funded to investigate several radiation effects and reliability issues associated with advanced electronic technologies. Radiation effects in electronics have been recognized as a critical problem in systems requiring high reliability for decades, but recent advances in semiconductor technology have dramatically affected the radiation-related vulnerabilities of electronic systems, as well as complicating testing and hardness assurance. These changes include the introduction of new materials (gate dielectrics, channel materials, metallization, isolation, and packaging), as well as new device structures (FinFETs, tri-gate transistors, Gate-all-around FETs, HEMTs, trench-gate power devices, etc.).
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210471
Entities
People
- Robert Reed
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- Vanderbilt University