INVESTIGATION OF GESN SEMICONDUCTOR LASER DEVICE PHYSICS FOR FUTURE SI-PHOTONICS INTEGRATION
Abstract
Silicon-based lasers have long been desired for owing to the possibility of monolithic integration of photonics with high-speed Si electronics and the aspiration of broadening the reach of Si technology by expanding its functionalities well beyond electronics. To overcome the intrinsic problem of band gap indirectness in the group-IV semiconductors of Si, Ge, and SiGe alloys, a new group-IV material system (SiGeSn) that expands beyond the SiGe alloys has been successfully demonstrated. The great success of the recent GeSn laser development work has made a giant leap towards to answering a fundamental question: Would GeSn based lasers ever be able to be used as the light source for Si photonic integration? Now GeSn lasers should be seriously considered as a competing technology versus the III-V solution for Si-photonics. The goal of this project intends to answer a follow-up question “How could GeSn lasers be used for Si photonic integration?” by exploring a feasible technical pathway, such as device structures and integration strategy, and its baseline characteristics. A well-integrated research plan is proposed in the project, which includes the following SIX tasks: i) Developing basic material building blocks for electrically injected GeSn lasers; ii) In-depth investigation of F-P cavity electrically injected GeSn bulk lasers; iii) Developing electrically injected GeSn QW lasers; iv) Strain engineering to improve the performance of electrically injected GeSn lasers; v) Development of monolithic CMOS integrated GeSn laser architecture; vi) Development of “SiGeSn material foundry 2.0” to provide high quality growth capability to the community.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210493
Entities
People
- Shui-Qing Yu
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Arkansas System