(DURIP) ARF LASER FOR DEEP UNLTAVIOLET PHOTOLUMINESENCE IN ULTRA-WIDE BANDGAP SEMICONDIUCTORS
Abstract
This DURIP proposal requests funds to purchase an argon fluoride (ArF) laser. Ultra-wide bandgap semiconductors have important applications in deep ultraviolet (UV) photonics, power electronics, and high-frequency electronics. Gallium oxide (Ga2O3), which has a bandgap of 4.9 eV is currently receiving a great deal of interest. With an incorporation of Mg into Ga2O3 materials, the resultant magnesium gallium oxide (MgGaO) alloys have some intriguing properties, such as strong p-type conductivity, high transparency, and ultra-wide bandgap. To properly study the optical properties of these ultra-wide bandgap semiconductor materials for various applications, we are in a critical need of a deep-UV laser to integrate with our existing monochromator and other optical components for deep-UV photoluminescence (PL) studies.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210505
Entities
People
- Jianlin Liu
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of California Regents