INVESTIGATIONS OF RADIATION EFFECTS ON GAN AND B-GA2O3 FIELD EFFECT TRANSISTORS: INFLUENCE OF GATE DIELECTRIC MATERIALS
Abstract
Wide and Ultra-Wide Bandgap (WBG and UWBG) semiconductors enable electronic devices that operate at frequencies and power levels far exceeding conventional semiconductors, with greatly improved metrics. High bond strengths, displacement energies, and radiation resistance have led to great interest for their use in radiation-rich environments. WBG Gallium Nitride (GaN, bandgap energy of 3.4 electron volts) electronics are available commercially. Government-sponsored research has begun on next-generation UWBG semiconductors, including beta-phase Gallium Oxide (beta-Ga2O3; bandgap energy of 4.8 electron volts) due to its transformative figures of merit, unique material properties, and anticipated higher radiation resistance. Despite commercial successes of GaN technologies, critical defects and unique vulnerabilities when operating in a radiation-rich environment remain poorly understood. This is largely due to the presence of new component materials within these devices coupled with the unusual operating conditions envisioned for these devices. This limits the reliability of GaN devices when used in space and strategic applications, necessitating significant operational derating, diminishing their performance advantages. To date, predictive device models for WBG and UWBG devices that correctly account for key radiation effects do not exist. This program will address critical knowledge gaps by carrying out systematic experimental studies designed to explore how extreme operating conditions and novel component materials within GaN and beta Ga2O3 devices influence the device radiation response. The effort combines state of the art material and device fabrication with unique defect and interface characterization methods to explore radiation effects in conjunction with the Air Force Radiation Effects Center of Excellence. Data obtained here will be available to inform the development of predictive WBG/UWBG device models in a radiation-rich environment.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210527
Entities
People
- Steven A. Ringel
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force