DEFECT ENGINEERING IN 2D SYSTEMS FOR PHOTONIC AND NANO-DEVICES (2D-SPAND)
Abstract
Atomically thin or two-dimensional (2D) materials include graphene, individual layers of hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDs). Because of their remarkable properties, TMDs had been utilized in novel optoelectronic applications such as field-effect transistors (FETs), broad-band photodetectors, light-harvesting devices, sensors, flexible devices and valleytronic components. Many of these applications require that the Transition metal dichalcogenides (TMDs) are crystalline monolayers and defect free. Unfortunately, monolayer TMD crystals contain a variety of intrinsic defects such as vacancies, adatoms, edges, grain boundaries, and unwanted substitutional impurities. Furthermore, these defects play an important role on the morphology, as well as on the optical, electronic, vibrational, magnetic, and chemical properties. The influence of these defects in 2D materials are more significant than in 3D materials. Defects can also introduce symmetry breaking in 2D systems, such as isotropic to anisotropic transitions. These defects could be classified by their dimensionality into zero-, one- and two-dimensions. 2D layers offer novel and unique possibilities for defect formation due to their low dimensionality and transparency. This proposal is aimed at controlling these lattice modifications at the atomic level and understanding their formation mechanisms in order to tailor their physio-chemical properties and construct novel photonic devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Apr 20, 2023
- Source ID
- FA95502210534
Entities
People
- Mukti Rana
Organizations
- Air Force Office of Scientific Research
- Delaware State University
- United States Air Force