Predictive Modeling of Nonlinear Trap Activity in GaN HEMTs for Modulated Large-Signal mm-Waves
Abstract
Gallium Nitride (GaN) semiconductor technology offers unprecedented capabilities for the design of high-efficiency wideband power amplifiers (PA) at millimeter-wave (mm-wave) frequencies to support 5th and 6th generation broadband wireless communication systems with gigabit download-upload capabilities. The Nonlinear RF lab at the Ohio State University is pursuing active research in collaboration with the Air Force Research Laboratory on (1) the modeling of GaN semiconductor transistors including trapping impairments (2) the design of broadband power amplifiers with high efficiency broadband and (3) the linearization of GaN amplifiers for use in MIMO transmitters. To support these three-prone research activities, a mm-wave generator with broadband modulation capability is requested.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 29, 2024
- Source ID
- FA95502310155
Entities
People
- Patrick Roblin
Organizations
- Air Force Office of Scientific Research
- Ohio State University
- United States Air Force