Two-dimensional Silicon Carbide for Future Optoelectronics and Photonics
Abstract
The main objective of this project is to push the frontier of optoelectronics and photonics by performing a fundamental study on the light-matter interaction in two-dimensional silicon carbide (2D SiC). Light-matter interaction plays a critical role in modern technologies, including nanophotonics, optoelectronics, and information technology. This interaction takes a new form when the thickness of materials is reduced to the atomic level. According to theory, 2D SiC has a direct wide bandgap of about 2.58 eV (which contrasts with the indirect bandgap nature of bulk SiC), very strong excitonic effects, enhanced photoluminescence, and various non-linear optical properties. These unique optical properties, combined with the outstanding thermal properties of SiC make this emerging 2D material an ideal martial platform for integrated photonics and optoelectronics. However, these properties have never been experimentally investigated or verified because the synthesis of 2D SiC has challenged scientists for decades. Supported by our recent success in the synthesis of 2D SiC, this project will perform rigorous research work to investigate the optical properties of 2D SiC. The research team uses two uniquely designed methods to fabricate 2D SiC- (i) liquid exfoliation of hexagonal SiC and (ii) chemical vapor deposition method. A variety of characterization techniques, such as aberration-corrected transmission electron microscopy, electron energy loss spectroscopy, Raman spectroscopy, photoluminescence, and scanning near-field optical microscopy will be used to investigate the optical properties of 2D SiC. This project has several potential impacts on DoD and AF research capabilities because SiC optics are increasingly being used for various military systems and aerospace applications. Thus, multiple technological fields will benefit from this project. New phenomena and-or applications may even be discovered by using 2D SiC as a building block. Lessons learned from this research will be used to design the next generation of 2D SiC-based devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 29, 2024
- Source ID
- FA95502310244
Entities
People
- Sakineh Chabi
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of New Mexico