Calcium-Based Stannate Perovskite Heterostructures for Multi-Functional Electronic Devices
Abstract
Stannate perovskite materials (semiconductors with chemical formula of ASnO3) have spurred tremendous interest lately due to their high electron mobilities at room temperature, making them excellent candidates for transparent and high-power electronic applications. However, the most studied stannate perovskites, BaSnO3 and SrSnO3 have some drawbacks that make them less than ideal for high-power applications. BaSnO3 only has a bandgap of slightly above 3 eV and has a large lattice constant that makes it incompatible with many commercial substrate platforms. SrSnO3 has much wider bandgap and similar mobility to BaSnO3, but exhibits a mixed-phase state that could limit reliability and breakdown field. In this project, we intend to investigate CaSnO3 which emerges as an extremely attractive alternative for high-power and multi-functional transistors. CaSnO3 is extremely interesting due to its high electron mobility, its ultra-wide bandgap of greater than 4.8 eV, its close lattice-matching to commercially-available substrates and ferroelectrics such as BaTiO3, and its potential for heterostructure engineering. In this project, we intend to merge key innovations in materials and device engineering to realize the potential of CaSnO3-based devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 29, 2024
- Source ID
- FA95502310247
Entities
People
- Steven J Koester
Organizations
- Air Force Office of Scientific Research
- Regents of the University of Minnesota
- United States Air Force