Synthesis of Ge1-ySny and Ge1-x-ySixSny materials and devices for full MWIR and LWIR coverage
Abstract
A program is proposed to synthesize binary and ternary semiconductor alloys of Si, Ge, and Sn with band gaps in the mid-wave (MWIR) and long-wave (LWIR) infrared, and to build prototype pin diode infrared detectors of significant technological interest to the DOD. The effort requires ultra-high Sn fractions of 20percent-40percent to cover the entire range of band gaps between 3 microm and 14 microm, exceeding the Sn concentrations currently possible by conventional Chemical Vapor Deposition (CVD). In the case of MWIR materials, optimized layers with larger bulk-like thicknesses and improved crystallinity will be fabricated, and viable n- and p-type doping protocols will be developed to enable diode fabrication. For LWIR materials, several strategies to increase the Sn concentrations will be explored, and the fundamental material properties will be studied in detail. The program builds upon an extensive track record on synthesis of more diluted analogs (less than approximately 20 percent Sn) and relies on the expertise, deep chemical knowledge, and experience of the ASU group in the hitherto successful approach of chemically designing smart precursors for CVD of epitaxial films. These precursors enable synthetic breakthroughs by facilitating crystal growth at ultra-low temperatures or by incorporating functional building blocks assembled in the gas phase.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 29, 2024
- Source ID
- FA95502310285
Entities
People
- John Kouvetakis
Organizations
- Air Force Office of Scientific Research
- Arizona State University
- United States Air Force