Dislocations as Interconnects for Spin Qubits

Abstract

Dislocations are imperfections that extend along a line in crystals. At the core of dislocations, atoms are often forced into complex arrangements, creating a local bonding environment that is different from that in bulk. This unique localized bonding structure can stabilize new electronic and-or magnetic states that are otherwise impossible to form. Dislocations also have an associated long-range stress-strain field that interacts with and attracts point defects, which can possess their own exceptional features, including electronic spin states. Examples of such point defects are nitrogen-vacancies in diamond or vacancy complexes in silicon carbide. The central hypothesis of this proposal is that the new local 1D “phases� at the dislocation cores can be used for spin qubit pattering and serve as solid-state quantum interconnects. To test this hypothesis, we propose an integrated computational-experimental framework to predict, create, and control dislocations and their interaction with well-established spin defects (qubits), divacancies in SiC. We postulate that dislocations can be used to address two main challenges in this area- (1) How can spin defects be patterned over large areas. And (2) how can spin defects be coupled. Our proposed effort builds on three interacting multidisciplinary themes- (1) theory and computations will inform experimental creation of dislocation patterns and networks of spin defects; (2) epitaxial growth of strain-relaxed FeO on SiC and integrated characterization will create patterned interface dislocation (misfit) networks, involving two top quantum coherence time materials. In a parallel route, dislocations will be injected into bulk SiC through mechanical bending and nanoindentation; (3) spin defect quantum measurements will test the role of dislocations in coupling of qubits via strain tuning, effective magnetic field, and engineering spatial location of the spin defects. This effort brings together the disparate research communities of mechanical metallurgy, semiconductor epitaxy, and solid-state quantum information to propose an entirely new way of addressing one of the major bottlenecks in quantum computing- engineering interactions between nearby spins. This team effort will create the foundational science underpinning the production of highly scalable patterned qubit networks.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 06, 2024
Source ID
FA95502310330

Entities

People

  • Maryam Ghazisaeidi

Organizations

  • Air Force Office of Scientific Research
  • Ohio State University
  • United States Air Force

Tags

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots