MOCVD for New Nitride Materials and Devices
Abstract
Heterogeneous epitaxial integration of new semiconductor materials and heterostructures in the past has enabled new scientific discoveries which have translated to technological applications ranging from ultrafast electronics powering today’s microwave, RF, and photonics industries. The nitride semiconductor materials systems (GaN, AlN, InN) has been the biggest revolution since silicon due to its applications in both visible and UV photonics, and in RF and power electronics. These materials are currently at a juncture where research is moving beyond the traditional (Al,Ga,In)N alloy system by including a richer materials fabric that promises significant expansion of the functionality of the materials family ranging from superconductivity (e.g., NbN, TiN etc.) to ferroelectricity (e.g., AlScN) and magnetism (e.g., FeN, MnN). These new nitride materials, when combined with the established HEMTs, LEDs, and lasers, promise a palette of revolutionary new device technologies ranging from THz transistors and memory-RF hybrids that exploit hi-K and ferroelectric AlScN and AlBN barriers, to all epitaxial superconducting NbN or TiN Josephson junctions, seamlessly integrated with GaN HEMTs for ultrahigh coherence microwave qubits, to epitaxial superconductor-laser heterostructures for the generation of entangled photon pairs for future quantum communications. Currently, these new nitride materials have only been explored by molecular beam epitaxy (MBE) and their feasibility has been proven.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 06, 2024
- Source ID
- FA95502310360
Entities
People
- Hari Nair
Organizations
- Air Force Office of Scientific Research
- Cornell University
- United States Air Force