Nanoscopy of 2D-3D heterostructure Semiconductors and Oxides for High-speed and Reconfigurable Electronics

Abstract

Two-dimensional (2D) materials offer a vast landscape of fascinating phenomena due to the interplay of various quasiparticle interactions within and between layers, including exciton-exciton interactions, local strain, dopants and alloys, charge transfer states, and distinct structural interfaces. Similarly, complex and correlated oxides also offer enormous reconfigurable phenomena such as metal-insulator transitions, spin, charge and orbital orderings, and dopant dependent tunable electronic properties. A hybrid 2D-3D heterostructures of semiconductors and oxide presents a novel platform to explore new physics in two dimensions and opens novel routes to electronic device applications taking advantage of the unique combined properties of 2D materials and oxides.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 06, 2024
Source ID
FA95502310375

Entities

People

  • Yohannes Abate

Organizations

  • Air Force Office of Scientific Research
  • United States Air Force
  • University of Georgia

Tags

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Space