2D Semiconductors-3D Nitride Ferroelectric Interfaces for Low-Power Memory
Abstract
With the slowing of Moore’s Law, there is dire need for new devices and architectures with emphasis on low power consumption. This is increasingly important for computations and algorithms that involve large amounts of data processing, pattern matching-searching, and multivariable optimization such as the ones commonly used for machine- and deep-learning applications, of great value to the Department of Defense. In recent years, the emergence of two-dimensional (2D) materials has revolutionized the conception and design of electronic heterostructures. In addition, the emergence of ferroelectricity in III-nitride system of aluminum, scandium and nitrogen (called AlScN) has added more impetus to the development of low-power, non-volatile memory devices that can be closely interfaced with the silicon-based logic processor. However, there has been little fundamental understanding on the nature of these van der Waals (vdW) interfaces between two materials where one is a vdW 2D layer and another is a 3D ferroelectric with very large polarization (greater than 100 uC-cm2), particularly with regards to field induced degradation, defect creation and loss of polarization. Here, we propose to investigate the fundamental electronic properties of interfaces between a 2D material and a 3D AlScN in the context of polarization switching and retention.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 06, 2024
- Source ID
- FA95502310391
Entities
People
- Deep Jariwala
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Pennsylvania