Studying magnetoelectric coupling in van der Waals-oxide thin film heterostructures

Abstract

U.S. leadership in the development of new materials for technologies in the areas of advanced information, sensing, and energy technologies, is critical to both future economic competitiveness and national security. Materials that are simultaneously ferromagnetic and ferroelectric, i.e., mul- tiferroics, promise electric-field control of magnetism, which is significant for the next generation of large-capacity and low-power memories and ultrahigh-sensitivity magnetic sensors. Because of the scarcity of single-phase multiferroics, composite systems such as ferromagnetic-ferroelectric heterostructures have generated a flurry of research activities. Currently, most research interests in multiferroic heterostructures are focused on the heteroepitaxy of traditional magnetic materials and perovskite oxide ferroelectrics. However, the extrinsic effects associated with the heteroepi- taxial interfaces such as the misfit strain, clamping effects, and dangling bonds that induce orbital hybridizations hamper the gain of fundamental understanding of the magnetoelectric coupling mechanism. To resolve these challenges, the overarching goal of this collaborative project is to iden- tify the appropriate composite constituents of ferromagnetic and ferroelectric materials, fabricate multiferroic heterostructures with optimized interfacial quality, tune and control magnetoelectric effects towards a comprehensive understanding of the coupling mechanics using model oxide and 2D chalcogenide materials. Two-dimensional (2D) van der Waals (vdW) materials and complex oxides provide a variety of choices for ferromagnetic and ferroelectric constituents with novel functionalities. Leveraging the applicant’s expertise in 2D vdW materials and the collaborator’s advanced epitaxial growth technique of oxide thin films, we propose to fabricate atomically flat vdW-oxide interface without misfit strain or dangling bonds. The studies of the interface will be carried out using a combination of state-of-the-art techniques including hybrid molecular beam epitaxy, optical second harmonic generation spectroscopy-microscopy, magnetoelectric transport, and synchrotron-based photoemission spectroscopy. These studies are expected to reveal key information of vdW-oxide heterostructures including multiferroic domain structures and their in operando response to an external field when they are fabricated into a device. The proposed research will involve broad collaboration with multiple institutions including PARADIM, Department of Energy National Laboratories, and Air Force Research Laboratories. Our work will open new opportunities for the design and production of spintronic and microwave magnetoelectric devices and their potential applications in microelectronic and quantum technologies.

Document Details

Document Type
DoD Grant Award
Publication Date
Mar 06, 2024
Source ID
FA95502310499

Entities

People

  • Wencan Jin

Organizations

  • Air Force Office of Scientific Research
  • Auburn University
  • Office of the Secretary of Defense

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space