Understanding High Field Electron Transport and Trapping in UWBG AlGaN Heterostructures
Abstract
The success of wide-band gap (WBG) materials and devices in DoD systems (especially where efficient thermal management, reduced footprint, and higher power are critically needed) have resulted in an increased attention towards ultra-wide bandgap (UWBG) materials (bandgap greater than 5eV). Amongst numerous UWBG materials, the AlGaN (Al greater than 65percent)-AlN material seems quite promising owing to its all-round material properties. While several material advances have been made in AlN or high composition AlGaN (Al greater than 65percent), there are still significant fundamental knowledge gaps that are needed to be filled to realize the full potential offered by the material system. The objective of this proposal is to perform fundamental research to fill the knowledge gaps in AlGaN (Al greater than 65percent) heterostructures. The proposed studies will be achieved through comprehensive material growth and heterostructure fabrication studies and using electrical transport experiments to probe and gain understanding of the material. If successful, this research will fulfill multiple knowledge gaps in the UWBG AlGaN (Al greater than 65percent) material. This project will result in experimental values for low-field and high-field electron velocity and critical electric-field for UWBG AlGaN (Al greater than 65percent) material. The successful implementation of current collapse mitigation technique will address one of the fundamental roadblocks and will provide a pathway toward achieving high frequency operation (greater than10 GHz) for UWBG transistors.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 06, 2024
- Source ID
- FA95502310501
Entities
People
- Chirag Gupta
Organizations
- Air Force Office of Scientific Research
- Office of the Secretary of Defense
- University of Wisconsin System