Elasto x-ray scattering for probing novel magnetic switching
Abstract
We propose to investigate the novel magnetic switching in selected prototypical antiferromagnets under elastic stress-strain using our newly developed elasto X-ray scattering technique. The next generation of spin-electronics urgently calls for magnetic switching with improved speed and efficiency. While crystalline magnetic materials exhibit a rich variety of exotic magnetic phenomena that may potentially be exploited, the challenge is to find a way to achieve functional control. This requires fundamental understanding on how the macroscopic magnetic properties and their correlated transport behaviors emerge from the microscopic spin-charge-lattice couplings at the atomic scale. Our approach is to utilize a synergetic combination of in situ stress-strain cells and advanced X-ray scattering to control novel magnetic phases by selectively breaking or enforcing their underlying symmetries. We target prototypical systems that display magnetically driven metal-insulator transition (MIT), crystal Hall effect (CHE), and quadrupolar order. All three types of phenomena have potential for next-generation electronics applications, because the MIT enables large resistance change, the CHE exploits the robustness of electronic topology, and the magnetic quadrupole order can be hidden from unwanted magnetic influence. They are supposed to be highly susceptible to externally applied strain but require experimental probes that can resolve and distinguish magnetic modulation from the lattice distortion. Our elasto X-ray scattering technique will provide an ideal sample environment for solving this problem. More importantly, we will directly resolve the correspondence between the elasto-responses of the electronic transport and the x-ray-resolved lattice-spin-orbital structures by syncing the two measurements. Additionally, we will further exploit the upgraded X-ray beam enhanced afforded by the Advanced Photon Source Upgrade to probe the elasto-responses with spatial and time resolution. The expected results will not only provide a new route to realize nonmagnetic switching of magnetic materials but also identify the microscopic process that drives the switching performance. The results further will provide better understanding and guiding principles for designing and engineering future spin-electronics devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 06, 2024
- Source ID
- FA95502310502
Entities
People
- Haidong Zhou
Organizations
- Air Force Office of Scientific Research
- Office of the Secretary of Defense
- University of Tennessee