Response of Wide Bandgap Semiconductors to Heavy Ion Irradiation
Abstract
Galactic Cosmic Rays (GCRs) are highly energetic particles originating from beyond our solar system. One critical component of GCRs is heavy charged particles (e.g., 56Fe), which can have kinetic energies that range from hundreds of MeV to TeV. Such particles produce dense electronic excitations and ionizations in materials which can lead to a wide range of radiation effects. The main goal of this research project is to investigate the consequences of highly energetic, heavy particle interactions with wide-bandgap (WBG) semiconductor materials and associated devices (e.g., Ga2O3 and AlGaN). Using one of the world’s largest ion accelerator facilities (GSI Helmholtz Center), systematic ion-beam studies will be performed, focusing on (i) targeted microbeam single-ion irradiations with spatial resolution below 500 nm and single- event effect (SEE) tests as well as (ii) broad-beam irradiations over a wide fluence range with total ionization effect studies. These irradiation experiments will be performed with and without the application of high electric fields and coupled with atomic-scale characterization of electronic and structural defect configurations using X-ray-neutron scattering, spectroscopy, and imaging techniques. The ultimate goal is to link device performance and failure with the underlying radiation effects produced in the individual component materials and relevant interfaces. This knowledge is critical to improve the radiation hardness of current and next-generation microelectronics for defense-related applications. To ensure that target materials, irradiation conditions, and performed testing are most relevant for Air Force related applications, this project is closely aligned with activities at the Air Force Research Laboratory (AFRL), the Air Force Center of Excellence in Radiation Effects Research on Electronics (COE) at Vanderbilt, and the Multi- University Research Initiative (MURI) center REDESIGN- Radiation Effects preDiction through Experimentally validated Simulation of Gallium Nitride at Penn State.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 06, 2024
- Source ID
- FA95502310515
Entities
People
- Maik Lang
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Tennessee