A Silicon Carbide Crystal Instrumentation Suite (SiCiS)
Abstract
Silicon carbide (SiC) is a critical semiconductor for next generation electric vehicles, smart grid, 5G-6G, and quantum technologies, as well as technologies operating at high power and in extreme environments (radiation, temperature, corrosion, etc.). However, the entire SiC scientific community is dependent on SiC crystals grown solely for industrial applications, with no ability to tailor the SiC crystal properties beyond specific parameters already determined by the commercial market. Furthermore, no open-access facility exists to enable scientific advancements in SiC crystal science and technology. This is compounded by the fact that there is a critical need for workforce development in SiC crystal growth, yet no facility exists to educate the next generation on how to make single crystal SiC. Here, we propose a suite of silicon carbide crystal growth and processing instruments as the central piece of a proposed partnership between onsemi, Penn State, and the US Air Force to establish a first-of-its-kind SiC Crystal Center (SiC3) focused on developing and translating bulk SiC crystal growth science, transitioning processing protocols to industry and national labs, and educating a new workforce generation in the exponentially growing profession of SiC crystal science and engineering.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2024
- Source ID
- FA95502310561
Entities
People
- Joshua A. Robinson
Organizations
- Air Force Office of Scientific Research
- Pennsylvania State University
- United States Air Force