Advanced in operando Atomic Force Microscopy studies of the gating mechanisms at metal oxide ion-gated transistors
Abstract
This proposal seeks understanding of fundamental mechanisms in ion-gated transistors (IGTs) using advanced in operando atomic force microscopy methodologies. Focusing on the interface between metal oxides and ionic liquids, the research aims to reveal the gating mechanisms and their effects on IGT performance. Ionic arrangement in IGTs will be studied using techniques like AFM force distance profiling, Mechanical Cyclic Voltammetry, Scanning Transmission Electron Microscopy, and X-ray Absorption Spectroscopy. The work seeks to illuminate the structure and dynamics of electric double layers, which are crucial for the performance of ion-gated transistors. The insights gained will help in the development of multifunctional devices, especially chemically-sensitive active devices with applications in many fields.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 07, 2024
- Source ID
- FA95502310575
Entities
People
- Martin Barbosa
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- Universidade Federal de Goiás