Multi-scale probes of correlation and causation in silicon
Abstract
Silicon spin qubits are an excellent platform for quantum computing. Among the various candidates, semiconductor spin qubits stand out for long coherence times, which can exceed 10 milliseconds in isotopically purified materials, and compatability with advanced semiconductor manufacturing technologies. Recently, single-qubit, two-qubit, initialization, and readout fidelities have all approached the threshold for fault tolerance in a variety of different spin-qubit modalities. However, several materials challenges present obstacles to the continued development of silicon spin qubits. These include charge noise, which causes the electrostatic confinement potentials to fluctuate in time; valley splitting, which creates unwanted near degeneracies in quantum-dot energy levels; and spatial variations in the electronic g-factor, which create difficulties for consistent control in large-scale systems. In this project, we will take a materials-first approach to discover the underlying causes of these challenges and correlations between qubit metrics and materials properties and measurements reflecting these challenges. In addition to bulk measurement techniques, we will use a suite of new local, non-qubit measurement techniques to focus on the properties of individual defects to learn more about their nature.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Mar 14, 2024
- Source ID
- FA95502310710
Entities
People
- John M Nichol
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of Rochester