High-power NIR and MIR semiconductor lasers based on topological photonic-crystal vertical-cavity
Abstract
High-power semiconductor diode lasers are used to pump fibre lasers for continuous-wave (cw) directed energy applications. In a cascade pumping scheme, a 793 nm diode lasers pumps Tm doped fibre which then pumps Ho doped fibre at 1.9 microm for high power lasing at 2.1 microm. In current designs, the edge emitting diode lasers have poor optical mode properties, making them inefficient for coupling into fibre.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 05, 2025
- Source ID
- FA95502410038
Entities
People
- Hui Cao
Organizations
- Air Force Office of Scientific Research
- United States Department of Defense
- Yale University