Development of cBN-Diamond N-type and P type conductivity using in-situ epitaxial and Ion implantation doping
Abstract
Cubic Boron Nitride (cBN) is an ultra-wide bandgap (UWBG) semiconductor that has excellent material properties, including an indirect bandgap that allows n and p type doping, a crucial requirement for the realization of high voltage, high current bipolar devices. In addition to the high-predicted breakdown field Ec, the Monte Carlo simulated saturated velocity of the material is very promising, making it ideal for lateral RF applications as well. Given cBN s high predicted from its large EC and thermal conductivity, as well as promise for shallow dopants, we hypothesize that it is the ideal material for power electronics. These same properties are also suitable for high power lateral devices, including RF transistors. The goal of this proposal is to determine the ultimate limits of the electrical performance for extreme bandgap indirect bandgap semiconductor c-BN, with an emphasis on codesigned power electronics applications.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502410157
Entities
People
- Michael Spencer
Organizations
- Air Force Office of Scientific Research
- Morgan State University
- United States Air Force