EPITAXIAL GROWTH OF VN ON Si3N4-Si (111)
Abstract
The University of North Dakota (UND) research proposal aims to grow high-quality vanadium nitride (VN) on Si3N4-Si substrates using molecular beam epitaxy (MBE), with a primary focus on precise growth control, and understanding and enhancing VN-Si3N4-Si interface properties. We propose an integrated approach combining advanced computational and experimental methods. Leveraging density functional theory (DFT) and kinetic Monte Carlo simulations, we aim to uncover VN growth mechanisms and predict the interface properties of VN-Si3N4-Si. Computationally, various Si and Si3N4 surfaces will be explored to identify optimal one(s) for the VN growth, considering elastic strain energy and lattice matching. Computational and experimental efforts will explore the impact of atomic structure, film thickness, lattice defects, and strain on the VN-Si3N4-Si properties. Experimental techniques including X-ray diffraction, atomic force microscopy, scanning tunneling microscopy-spectroscopy and transmission electron microscopy will be utilized to analyze morphology, structure, composition, and interface properties. The proposed interdisciplinary approach promises to elucidate VN growth mechanisms, optimize growth conditions, and enhance interface properties for potential applications, including quantum computing.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502410201
Entities
People
- Deniz Cakir
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- University of North Dakota