MURI- Enabling extreme bandgap electronics - EXBE

Abstract

The proposed EXBE (Enabling eXtreme Bandgap Electronics) MURI unites the leading global experts in theory, synthesis, property control, characterization, and device development in III-nitrides from materials science, electrical engineering, and physics departments form North Carolina State University, Georgia Institute of Technology, University of South Carolina, Ohio State University, and University of New Mexico. EXBE aims to advance the state of AlN and related Al-rich AlGaN alloys for applications in power electronics through equilibrium and non-equilibrium approaches to doping and point defect management. These methods have recently resulted in major breakthroughs and technologically interesting electrical properties in these materials.

Document Details

Document Type
DoD Grant Award
Publication Date
Feb 06, 2025
Source ID
FA95502410269

Entities

People

  • Zlatko Sitar

Organizations

  • Air Force Office of Scientific Research
  • North Carolina State University
  • United States Air Force

Tags

Readers

  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics