Interface physics of ferroelectric AlBN-Ga2O3 and AlBN-GaN stacks for power electronics
Abstract
The aim of Ferro4Power is to increase the range of applications of Ga2O3 and GaN based devices by introducing a high breakdown, power electronics compatible, ferroelectric layer into the device stack. Commercial aviation accounts for about 2.5percent total world CO2 emissions (1bT). New generation planes can save 20-25percent CO2 emissions. A true, long-term perspective, eliminating significant CO2 emissions, is electric but current passenger payload limits are a major obstacle. One viable solution is the hybrid airplane in which gas turbines are used for take-off and landing (while simultaneously charging batteries) and in-flight cruising is electrically powered. However, weight constraints require high voltage components to minimize payloads whilst delivering required power (GEA) and be realistic for medium-long-haul flights. A second potential application concerns solid state devices using GaN, capable of approaching thermal loads associated with power amplification in communications. Ga2O3 and GaN are key materials for integration into power electronics thanks to their high breakdown fields and electron mobilities. Ferroelectric materials have two states of opposite electric polarization, switchable by an applied electric field. We propose to study the physical properties resulting from the insertion of a thin ferroelectric film adjacent to Ga2O3 or GaN layer in a diode or transistor stack to enhance control of the electronic band levels. Classical perovskite ferroelectrics could perform the same role, however, the minimum film thickness for ferroelectric stability precludes 3D integration, furthermore, they are not in general compatible with Si technologies. Ferroelectric hafnia is one possibility but the breakdown field is more compatible with consumer electronics. AlBN could be the most suitable ferroelectric for high voltage applications thanks to its 5.5 eV band gap, high polarization and breakdown field similar to that of Ga2O3.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502410312
Entities
People
- Nicholas Barrett
Organizations
- Air Force Office of Scientific Research
- United States Air Force