Investigating Electrical Conductivity in Defective-Doped AlN Thin Films
Abstract
Aluminum Nitride holds significant potential for advancing next-generation power electronic and deep-UV optoelectronic devices. With its wide bandgap of 6.1 eV, Schottky barriers exceeding 2 eV, and a high breakdown field surpassing 15 MVcm-1, Aluminum Nitride thin film materials exhibit appealing characteristics for such applications. Achieving precise control over doping and compensation mechanisms spanning several orders of magnitude is crucial for realizing highly conductive regions for optoelectronics and low-doped drift regions for power electronics. The main objective of this proposal is to explore how the interaction between dopants and both point and extended defects affects the electrical conductivity of Aluminum Nitride thin films, with some consideration for thermal properties. Employing a range of advanced computational tools, we will particularly delve into understanding the influence of threading dislocation densities, dopant-vacancy complexes, and DX centers. Moreover, we will investigate methods to mitigate their effects, with ion implantation emerging as a notable approach. This comprehensive understanding will extend to other ultra-wide bandgap semiconductors, aiming to enhance free electron concentration and consequently achieve heightened electrical conductivity.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502410316
Entities
People
- Celine Hin
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- Virginia Tech