Impact of rare-earth ions incorporation in high mobility wide bandgap degenerated semiconductors- study considering many-body effects and advanced optical dispersion models (T345)
Abstract
This work will study the optoelectronic and electrical properties of IZO, IGZO, and IZrO thin films and assess the impact of rare-earth (RE) incorporation in their structure. The study will use recently developed advanced optical dispersion models for fundamental absorption and appropriate dispersion models for free carrier absorption, considering the impact of distinct electronic scattering mechanisms through a dynamical resistivity analysis. The researchers also plan to determine the conduction and valence band-edge curvature through an effective masses analysis combining optical and electrical measurements. Subsequently, a crystal field analysis will be performed to assess the symmetry of the surrounding environment of the RE ions on the RE-related light-emission, after activation. Further investigation will be carried out to engineer the RE light-emitting properties of these materials while trying to keep their most attractive properties such as high optical transparency in the visible range and low resistivity. The research aims to shed light on the capabilities of transparent conductive oxides (TCOs) to host optically active RE ions without dramatically compromising their optical and electrical properties. As well as on revisiting the Burstein-Moss shift and electron-electron and electron-impurities interactions and their renormalization effect in the framework of current optical dispersion models for high carrier mobility TCOs such as IZO, IGZO, and IZrO thin films.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502510006
Entities
People
- Jorge Guerra Torres
Organizations
- Air Force Office of Scientific Research
- Pontifical Catholic University of Peru
- United States Air Force