Multi-level electrical resistance switching in ferroelectric field effect devices
Abstract
innovative reconfigurable logic device that can be used in neuromorphic computing. Unlike conventional logic devices which can only be toggled between on and off states, this new device can be switched to multiple states in between on and off , enabling unprecedented multi-level logic functionalities. The working principle of this device is based on gradual switching of polarization in a ferroelectric thin film from fully up to fully down states which, in turn, significantly alters the conductance in the conducting channel material. This project aims to explore the physical processes involved in coupling of ferroelectrics with conducting oxide materials, to optimize the performance of such a device. Key aspects include studying how ferroelectric domains form and evolve under voltage pulses. We will investigate the impact of channel materials by tuning channel materials with ferroelectrics. The project will also explore the effects of different electrode materials and atomic termination at the interface on contact resistance and switching ratio. Finally, we propose to study simultaneous structural and electronic structure changes at the interface under polarization switching to understand how change in polarization translates to conductivity modulation in channel materials. With a multidisciplinary approach, this research aims to enhance the understanding of ferroelectric domain dynamics and their implications for future electronic devices, paving the way for developing multi-level logic systems with improved performance.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 06, 2025
- Source ID
- FA95502510026
Entities
People
- Charles Ahn
Organizations
- Air Force Office of Scientific Research
- United States Air Force
- Yale University