Quantifying the Relationship Between Optical- and Heavy-Ion-Induced Charge Generation in Si-Based Devices and Circuits
Abstract
A comprehensive investigation aimed at performing the basic research necessary to quantify the relationship between charge generation by nonlinear-optical pulse injection and charge generation by heavy-ion irradiation in advanced devices and circuits, is proposed. At present there exists no method for correlating heavy-ion and pulsed-laser-induced charge generation in advanced technology platforms. The present proposal combines Georgia Tech’s world-leading expertise on the radiation-induced transient response of silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and highly-scaled (sub-100 nm) CMOS technologies, with NRL’s world-leading expertise and capabilities in the application of pulsed-laser approaches for single-event effects (SEE) investigations, to establish this heavy ion-to-laser correlation for DoD and the radiation effects community
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Oct 13, 2016
- Source ID
- HDTRA11610018
Entities
People
- John Cressler
Organizations
- Defense Threat Reduction Agency
- Georgia Tech Research Corporation