Radiation Characterization of STT-RAM Devices
Abstract
Spin Transfer Torque Random Access Memory (STT-RAM) is a promising non-volatile memory technology that provides faster operations, better endurance, and lower power than existing non-volatile memories such as the NAND flash used in a typical memory stick. Because of all these great advantages it is projected that this technology will be used in the near future for many systems related to civilian and military applications, including space based systems, data centers, and other systems that require fast, low power, and rad-hard memory devices. Understanding the impact of radiation on the STT-RAM memory devices is considered an important topic of study which requires a detailed characterization of radiation effects on these memory devices. Based on these studies researchers can potentially find various ways of dealing with radiation induced memory failures. The goals of this multidisciplinary fundamental research are: (1) to identify radiation induced damages on these devices, (2) apply laser based techniques to rapidly test devices, and (3) find circuit based solutions to remedy damages caused by radiation and recover the stored data.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 26, 2016
- Source ID
- HDTRA11610025
Entities
People
- Nader Bagherzadeh
Organizations
- Defense Threat Reduction Agency
- Naval Information Warfare Center Pacific