Radiation Effects in Vertical 2D Heterostructure Devices Formed Using Synthesized Materials
Abstract
There are a wide variety of materials that exhibit layered structures including graphite, boron nitride, and molybdenum disulfide. These materials typically have strong covalent bonding within the layers and weak van der Waals bonding between layers. Therefore, one can readily synthesize single atomic layers of these materials, commonly known as two-dimension (2D) materials, with unique electronic properties. Vertical stacking of different 2D materials allows for the atomic-scale engineering of novel vertical heterostructure devices. Vertical 2D heterostructures provide unique current-voltage characteristics based on quantum-mechanical tunneling that are of interest for a wide range of electronic and optoelectronic devices in future DOD systems. Due to the strong impact of interfaces and passivation on the radiation responses of 2D materials, radiation effects in 2D heterostructures are expected to be significantly different and more complex than those of individual 2D materials. The principal investigators will combine experience in 2D materials synthesis and characterization, device fabrication and characterization, radiation and reliability effects, and density-functional-theory calculations to develop a fundamental understanding of radiation-induced defects in vertical heterostructures for tunneling devices fabricated using synthesized 2D materials. Beyond the specific tunneling devices to be studied, this fundamental understanding will be applicable to any 2D heterostructure device including light-emitting diodes and solar cells, which all have potential for future DOD systems.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- May 26, 2016
- Source ID
- HDTRA11610032
Entities
People
- Eric M Vogel
Organizations
- Defense Threat Reduction Agency
- Georgia Tech