Radiation Effects Research on Two-dimensional Transport in Diamond-based Semiconductor Structures
Abstract
Radiation Effects Research on Two-dimensional Transport in Diamond-based Semiconductor Structures. The goal of the present proposal is to achieve fundamental experimental and theoretical advances towards understanding the radiation interactions with two-dimensional (2D) conducting channels in Diamond-based semiconductor structures. To be investigated are high field effects such as hot carriers and hot phonon generation, the material/interface defects, surface and interface states, as well as the materials science processes which occur at ohmic contacts and Schottky barriers. The effort will culminate in a comprehensive and yet nonexistent physics of failure understanding, in order to effectively parameterize the degradation mechanism in Diamond structures due to radiation fields. The team will use specifically designed test structures and field effect transistors (FETs) fabricated at the University of Maryland nanofabrication center. The enhanced device performance will be achieved using twodimensional Diamond surface conduction and buried delta -doped layers. It will be based on the team s recent success in growing boron delta-doped single crystal Diamond structures with the highest in the world hole mobility that exceeds published up results to date by more than 15 times. Physics-based radiation degradation mechanisms will be identified at Radiation Facilities of the UMD. Our approach will start with baseline experiments for Diamond surface channel heterojunction field effect transistors (HFETs) and will proceed to the higher levels of radiation dose, dose rate and type of ionizing radiation. The team will expand the physics-based device models to Diamond surface-specific failure mechanisms by extensive experimental analyses of materials. Physics-based radiation degradation mechanisms will be identified with high resolution probes, and with electrical and optical experimental techniques, in order to establish physics-based radiation degradation paths. The physics of failure parameters determined as the result of each experimental iteration will be incorporated into the radiation susceptibility prediction models and then extended to our unique delta doped 2D hole gas channels in Diamond. The results will be disseminated through the scientific community via annual conferences on materials science and nuclear radiation effects. In addition, two text books will be published by the university researchers, one on generic radiation failure mechanisms and models and the second one on Diamond HFET technology-specific radiation degradation mechanisms. The project will be carried out by a complementary research team led by PI Aris Christou (the University of Maryland), responsible for test structure fabrication, radiation effects testing, modeling and characterization, with essential support from Euclid TechLabs (co-PI Jim Butler, advanced diamond structures growth and preparation). This combination of structure growth, circuit design, radiation effect modeling, and experimental verification, aided by unique laboratory capabilities, is essential to advance the design science for survivable electronics. The proposed approach will pave the way for Diamond FET applications in DTRA terrestrial, sea, and space applications. The research will advance current knowledge on the Science for Protection from WMD and will help incorporate robust nanoscale Diamond technologies with desirable c-WMD attributes in DOD systems. The project will also train a new generation of students and help maintain our nation s preeminence in the field
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 09, 2017
- Source ID
- HDTRA11710007
Entities
People
- Aristos Christou
Organizations
- Defense Threat Reduction Agency
- University of Maryland