Fundamental Studies and Modeling of Radiation Effects in Beta-Ga2O3
Abstract
Fundamental Studies and Modeling of Radiation Effects in Ga2O3. The á-phase of Gallium Oxide is a very promising monoclinic semiconductor with relevant applications for power electronics and also for solar blind photodetectors. A team from University of Florida and Naval Research Laboratory proposes to quantify proton, electron, gamma ray and neutron total dose effects in á-Ga2O3 and measure fundamental properties such as (i) the carrier removal rate and its dependence on electric field (ii) the changes in mobility and the temperature dependence of mobility to identify the degradation mechanisms (iii) the activation energy and concentration of radiation-induced traps and their spatial location (iv) the effect of scaling oxide volume (v) thermal stability of damage and (iv) the role of hydrogen in the changes in transport properties. The results will be continuously incorporated into a new simulation technology for accurate prediction, not only of the response to radiation, but the ability to design structures specifically for improved stability against radiation exposure. Accordingly, we are proposing research thrusts in characterization and testing after degradation to identify the physical origin of the degradation modes, and also in simulation. The FLOOPS/FLOODS simulation platform we pioneered is extensively used at Intel to simulate state-of-the-art Si structures and will help provide a more comprehensive understanding of Ga2O3-based structures and allow predictive simulations. The unique coupling of theory and experiment will produce a detailed understanding of radiation effects on á-Ga2O3 and a predictive capability for new radiation hardened materials and components
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Feb 09, 2017
- Source ID
- HDTRA11710011
Entities
People
- Stephen Pearton
Organizations
- Defense Threat Reduction Agency
- University of Florida