TEM Investigation on WMD Radiation of Vertical GaN Materials, Junctions, and Interfaces
Abstract
Protection of novel compound semiconductor devices for WMD effects is a key element in DoD-related reliability studies, as is protection from space-based radiation. GaN vertical device structures, mostly for high-power applications, have recently become available due to significant breakthroughs in quasi-bulk epilayer growth. For the first time, the influence of dislocations on device performance can therefore be neglected for such GaN-based device structures. The effect of WMD-relevant radiation (gammas and neutrons) and of space-relevant radiation (protons and heavy ions) on defect generation in GaN vertical device structures will be investigated. Specifically, the characteristics of radiation-induced defects at the devices interfaces and electrical junctions will be the topic of this proposal. A complete chemical and structural investigation using transmission electron microscopy (TEM)-consisting of electronic-defectstate, chemical mapping and crystalline reconstruction of the interface and junction areas-is proposed
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 10, 2017
- Source ID
- HDTRA11710032
Entities
People
- Oscar Dubón Jr.
Organizations
- Defense Threat Reduction Agency
- University of California, Berkeley