Exploration of Radiation Effects in Beta-Gallium Oxide Materials and Devices
Abstract
A basic research program is proposed to establish the first comprehensive, quantitative study of radiation-induced defects in wide bandgap ß-Ga2O3 (betaphase gallium oxide) materials and their influence on ß-Ga2O3 devices designed for high power and high frequency electronics applications. ß-Ga2O3 is a material with extraordinary properties compared with all contemporary wide bandgap semiconductors, possessing device figures of merit projected to substantially exceed all current technologies. Furthermore, the availability of native substrates enables a true, homoepitaxial wide bandgap technology that is both scalable and potentially highly reliable in harsh operating environments compared with contemporary technologies. This is a primary differentiator and advantage for ß-Ga2O3. Team members are at the cutting edge of ß-Ga2O3 research, already having demonstrated high quality epitaxial ß-Ga2O3 films and heterostructures, having revealed the first complete mapping of natural defect states, and demonstrating worldrecord ß- Ga2O3 MOSFET devices. As a result, ß-Ga2O3 is rapidly maturing and has the realistic potential to create game-changing ultra-wide bandgap devices for defense electronics operating in radiation environments. The purpose of this program is to investigate the presence and impact of radiationinduced defects in state-of-the-art ß-Ga2O3 materials and devices. The program builds from our established experience with ß-Ga2O3 and leverages combined decades of experience on radiation effects in wide bandgap GaN device technology. Anticipated results include complete mapping of radiation-induced defects in ß-Ga2O3 materials and devices, based on experiment combined with first principles theoretical calculations, determining total radiation dose effects, developing defect introduction models that lead to device designs based on predictive models, and correlating specific radiation-induced defects with material and device characteristics. The effort will provide a basic foundation for future application of ß-Ga2O3 in radiation-hardened defense electronics
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 10, 2017
- Source ID
- HDTRA11710034
Entities
People
- Steven A. Ringel
Organizations
- Defense Threat Reduction Agency
- Ohio State University