Radiation Effects in Ultra-Wide Bandgap AlN and Diamond Schottky Diodes
Abstract
Emerging ultra-wide bandgap semiconductors such as AlN and diamond have unique material properties, e.g., large energy bandgaps, high breakdown electric field, and high carrier motilities, which are promising for high-power and high-frequency DoD radio frequency (RF) and power systems. Due to their large bandgaps and displacement energy, greater radiation hardness is also expected from AlN and diamond devices, which are critical for various DoD electronic systems that must operate in radiation environments or survive manmade nuclear events. Despite these appealing properties, research of AlN and diamond is still in its infancy, with little knowledge on the radiation effects in these devices. This greatly hinders the development of radiation-insensitive ultra-wide bandgap devices for DoD-critical power and RF applications. In this YIP research plan, we seek to establish a fundamental understanding of the radiation effects in ultra-wide bandgap AlN and diamond devices. Radiation experiments such as proton, electron, and ?-ray irradiation will be performed on AlN and diamond semiconductors, as well as on Schottky diodes based on these materials. Key topics in radiation effects such as total dose effects, energy levels of radiation defects, carrier removal rates, role of preexisting defects, and thermal stabilities of radiation defects will be studied, and their impacts on the device will be discussed. An interdisciplinary approach will be implemented which includes radiation simulation using quantum statistical algorithms and Monte Carlo simulations, AlN and diamond materials growth by metalorganic chemical vapor deposition (MOCVD) and micro plasma chemical vapor deposition (MPCVD); radiation experiments using proton, electron, and ?-ray sources; comprehensive material characterization including x-ray diffraction (XRD), deep level transient spectroscopy (DLTS), and transmission electron microscopy (TEM); and fabrication and testing of Schottky diodes. A successful outcome of the research will significantly advance the fundamental knowledge on radiation effects in emerging AlN and diamond devices, and provide basic guidance for the design and fabrication of nextgeneration radiationinsensitive ultra-wide bandgap devices, which are critical to various DoD RF and power applications
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 10, 2017
- Source ID
- HDTRA11710041
Entities
People
- Yuji Zhao
Organizations
- Arizona State University
- Defense Threat Reduction Agency