Radiation Effects in Monolithic SiGe Electronic + Photonic Integrated Circuits.
Abstract
The present proposal seeks to extend our fundamental radiation effects research in advanced SiGe technology into a new and very exciting emerging arena which is highly relevant to DTRA needs: monolithic SiGe electronic+photonic integrated circuits for space systems. The PI has a long-standing (>10 years) unique partnership with IHP in Germany (IHP is the German government funded research center that provides foundry services for their SiGe platforms). IHP is the developer of the world s first SiGe photonics integrated circuit platform (called IHP SG25H_EPIC), which combines on-die multi-hundred GHz SiGe BiCMOS electronics (IHP SG25H4) with newly-developed silicon-compatible photonic building blocks (Ge photodiodes, waveguides, grating couplers, multimode interferometers, etc.) to enable the realization of broadband optical modulators (e.g., segmented Mach-Zehnder), coherent receivers and transmitters, and other key optoelectronic subsystems on a single silicon die. Such SiGe-based optoelectronic systems will be reliable and lowcost, have highly attractive performance (> 40 Gb/s data links), facilitate easy packaging, achieve aggressively small form-factor as well as compelling SWAP-C metrics, and thus are expected to possess substantial potential for insertion into future DoD space systems. In the proposed research we will conceive, design, fabricate (leveraged at no cost to DTRA), and test a wide variety of novel SiGe photonic ICs (both components + subsystems), under both total dose and transient radiation exposure, model those components for improved understanding of their radiation response, and investigate potential mitigation strategies, as required
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 23, 2018
- Source ID
- HDTRA11710053
Entities
People
- John Cressler
Organizations
- Defense Threat Reduction Agency
- Georgia Tech Research Corporation