Spin Based Low Field Magnetoresistance as a Novel Tool for the Investigation of Radiation Effects in 3D and Vertically Integrated Microstructures
Abstract
We propose an interdisciplinary, multi-university study which will develop a new approach to study total dose radiation effects in electronic devices within fully processed three-dimensional (3D) and vertically integrated circuits. Our approach will develop and apply a newly-discovered technique of making very sensitive measurements of defect-induced electronic transport within functioning device structures at room temperature. The very sensitive measurements of defects are made by measuring the changed electrical current in small (< 1000 Gauss) magnetic fields. Although these small magnetic fields do not affect high-conductivity regions much, they substantially perturb the spin correlations between defects, which alters the electrical transport through lower-conductivity regions, including tunnel barriers, depletion regions, silicon/dielectric interface regions and dielectric films used in memory devices. This approach will provide fundamental atomic scale understanding of some aspects of radiation damage in fully processed 3D and vertically integrated devices. Our proposed research program will be truly interdisciplinary, involving theory and modeling from Michael Flatté’s group (physics and electrical engineering) at the University of Iowa and measurements from Patrick Lenahan’s group (applied physics and materials science) at Pennsylvania State University.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jul 16, 2019
- Source ID
- HDTRA11810012
Entities
People
- Michael Flatte
Organizations
- Defense Threat Reduction Agency
- University of Iowa