Hybrid Solid and Gas Phase Deposition of Hydrogenated Silicon for Photovoltaics
Abstract
The approach is to replace the PECVD process used to make uc-Si PV devices with a sputtering technique in hydrogen atmosphere. The authors show significant data such that there is a good chance of technical success with this approach. In a cost estimation, costs are saved relative to the PECVD approach due to needing only one vacuum chamber for all layers, and due to not needing toxic precursors to form the various doped and undoped Silicon layers. In all this would be a modest but significant improvement in the manufacturing technology for these devices.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 26, 2017
- Source ID
- N000141510066
Entities
People
- Nikolas Podraza
Organizations
- Office of Naval Research
- United States Navy
- University of Toledo