BASIC MATERIALS STUDIES IN MBE-GROWN III-NITRIDES FOR ADVANCED ELECTRONICS
Abstract
Short Work Statement:Basic Materials Studies in MBE-Grown III-Nitrides for Advanced ElectronicsFunds are provided to investigate the synthesis of wide bandgap epitaxial III-Nitride films for Electronic Devices for RF applications. The PI is prof. Jim Speck, the performer is the University of California at Santa Barbara.The PI will build recent advances in GaN-based materials growth, physical properties, and characterization at UCSB. This effort will focus on high flux growth using a new generation of RF-plasma sources for plasma-assisted molecular beam epitaxy. Additionally, the program will emphasize growth by Plasma-Assisted Molecular Beam Epitaxy (PAMBE), Gas-Source Ammonia (NH3) MBE, and Metalorganic Chemical Vapor Deposition (MOCVD), and advanced materials characterization of N-face (0001) materials. Studies of the important barrier alloy InAlN will be pursued by all growth techniques. This effort will also include a comprehensive study of alternate n-type dopants. The program will be closely coordinated with the companion program at Ohio State lead by Prof. Steve Ringel which will characterize the electronic properties of the materials.ObjectiveDevelop new high flux, high growth rate epitaxial processes for Nitride-based III-V materials, and investigate the properties of these materials for electronic devices based on Nitrogen-Polar Gallium Nitride and related barrier materials including AlInN.ApproachPI will carry out epitaxial studies using high flux growth using a new generation of RF-plasma sources for plasma-assisted molecular beam epitaxy. The effort will include growth by Plasma-Assisted Molecular Beam Epitaxy (PAMBE), Gas-Source Ammonia (NH3) MBE, and Metalorganic Chemical Vapor Deposition (MOCVD). The range of growth conditions with these epitaxial processes will be comprehensively studied and correlated with material quality and electronic properties. THe effort will include studies of several GaN crystal faces including Nitrogen Polar.Overall Merit and Mission / RelevanceGallium Nitride-based electronic devices are enabling the advancement of Naval Communication systems, Surveillance sensors and Electronic Warfare capabilities. The new Nitride based materials that will result from this effort will offer even greater improvements in power density and efficiency, and the development of new epitaxial growth approaches will improve manufacturing approaches and affordability.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jan 25, 2017
- Source ID
- N000141512074
Entities
People
- James S. Speck
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara