STUDY OF BULK GAN BASED VERTICAL IMPATT DIODES FOR GHZ TO THZ APPLICATIONS

Abstract

Study of Bulk GaN Based Vertical IMPATT Diodes for GHz to THz Applications Abstract This program aims to develop and demonstrate GaN-based Impact ionization Avalanche Transit-Time (IMPATT) diodes for microwave through THz frequency generation, made possible by leveraging the state-of-the-art epitaxial material growth techniques, in combination with fabrication of scaled devices for high frequency operation. These devices have the potential to significantly advance the generation of millimeter-wave through THz frequency power, as a consequence of their anticipated absolute output power and conversion efficiency. The recent development of GaN-on-GaN P-N junction diodes on low dislocation density substrates and the first demonstration of RF gain in P/N+/N-/N+ GaN diodes [1] have established the enabling technological fundamentals for GaN IMPATT device development and demonstration. This project will focus on design, fabrication, and testing of GaN IMPATT diodes operating from the microwave through THz frequency regimes. The proposed work will include the scientific goal of experimentally evaluating the impact ionization behavior of high-quality GaN epitaxial structures in detail to enable more sophisticated device designs. Preliminary estimates suggest that operational frequencies approaching 500 GHz may be possible with GaN-based devices; this work will aim to experimentally establish the fundamental and practical limits of avalanche-based processes in GaN, and to optimize devices for operation from X-band into the sub-millimeter-wave and THz frequency regimes. [1] P. Fay, O. Aktas, D. Bour, and I. C. Kizilyalli, “Experimental observation of RF avalanche gain in GaN-based PN junction diodes,” Electronics Lett., vol. 51, no. 13, pp. 1009-1010, DOI 10.1049/el.2015.1551, 2015.

Document Details

Document Type
DoD Grant Award
Publication Date
Aug 12, 2016
Source ID
N000141512188

Entities

People

  • Patrick Fay

Organizations

  • Office of Naval Research
  • United States Navy
  • University of Notre Dame

Tags

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • 5G
  • Microelectronics