Channel Engineering of GaN HEMTs to Mitigate Soft Gain Compression
Abstract
Project Abstract for Channel Engineering of GaN HEMTs to Mitigate Soft Gain Compression Maximizing output power density and frequency performance have been the main objectives addressed in Gallium Nitride (GaN) high performance transistor research to date. While several systems benefit from the high power capabilities of GaN, their output requirements for wide dynamic range and complex modulation cannot be accommodated by today’s GaN technology because of the non-linear gain behavior that presently exists. Circuit level techniques such as pre-distortion and amplifier back-off have been considered before, but often have costly trade-offs in terms of complexity, bandwidth, and performance, which prompts designers to question the ultimate advantage of using GaN. To facilitate wide-scale adoption of GaN HPA technology across the DoD, it is imperative that gain non-linearity be addressed at the device level. The objective of the proposed project is to re-engineer GaN transistors to provide device-level solutions for premature/soft gain compression.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N000141512363
Entities
People
- Siddharth Rajan
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy