Achieving Vertically Integrated Power Electronics (VIPE)
Abstract
This thirty-six month project will develop reliable power electronic devices using novel GaN V-HFETS and Trench HFET power switches. The Tasks proposed are to overcome the key research and manufacturing challenges for high voltage applications. This research will pave out a fundamental approach to systematically address such challenges and utilize the proposed switches in next generation of power electronic based systems for the Navy. To satisfy the present and future power system objectives we will design enhancement mode GaN-based switches and rectifiers that satisfy the current and future US Navy requirements for power conversion circuits and address their fabrication, as well as their failure mechanisms. Research tasks are proposed which address critical switch parameters such as turnon voltage, blocking voltage and on-state losses as related to device design and material parameters. The choice and control of doping level, mobility, conditions for MOS GaN channel inversion are very critical for this purpose. We will investigate technology parameters such as doping activation, choice of the appropriate material system, and crystal plane for controlling polarization and piezoelectric effects, optimally processed device profiles for maintaining high electric fields while keeping them below their critical values, surface damage after etching, passivation, heat dissipation through spreaders and heat sinks made for example from diamond, confined epitaxy and growth of layers with low doping values. These are key parameters determining the power switch performance and promising improvement of their parameters beyond the current state of the art. The research undertaken will be in close collaboration with the Naval Research Laboratory through the exchange of samples and through the use of complementary laboratory facilities. The key task for the successful development of power switches is the determination of degradation mechanisms and achieving switch robustness. The proposed project integrally incorporates new multifaceted physics of failure for each degradation mechanism. A unique physics of failure methodology for robust manufacturing of III-Nitride based switches will result in a reliable technology for Naval Systems.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N000141512392
Entities
People
- Aristos Christou
Organizations
- Office of Naval Research
- United States Navy
- University of Maryland