Physics-Based Modeling of Power Electronics Converters Involving GaN Switching Device for Fault Tolerant Operation
Abstract
Statement of Work Physics-Based Modeling of Power Electronics Converters Involving GaN Switching Device for Fault Tolerant Operation PI: Professor Osama A. Mohammed Energy Systems Research Laboratory Department of Electrical and Computer Engineering (ECE) Florida International University (FIU) Miami, Florida 33174 Tel: 305-321-5622 e-mail: mohammed@fiu.edu 1.0 Scope. Power electronic circuits and components are essential for energy conversion on the ship power system (SPS). Many of the components on the SPS experience operational loading profiles that will expose the system to failures. The controllable power switches are the heart of power electronics systems. Recently, GaN switches are getting higher and higher attention due to their low On-resistance and desirable thermal performance in high power application. Although the multi-physics modeling of these devices in the numerical domain has resulted in deeper understanding of the switch performance and switch reaction to variation in the operational environment, prediction of the dynamic behavior of the material and the switch in a coupled magnetic, electric, and thermal domain is still unsolved and represent challenging tasks. This is mainly due to the need to identify the dynamic behavior of material tensors in the numerical domain. This research proposal, present a solution for prediction of the material tensors during the switch operation. Based on this, a functional model of a switch is created and it is then employed in the design of the power converter. 2.0 Requirements. Task 1: Physics-based modeling of GaN switching devices The research sub-tasks to be performed to achieve the results for this task include: 1. Develop the 3DFE model for the GaN device and identify a measurement circuit. The experimental process will be identified and changes will be made based on statistical analysis using the specialized software such as the JMP software. 2. Develop the process for material modeling including the calculation of the material tensor as a function of electrical loading condition, GaN device geometry, temperature. 3. Simulation of the GaN device failure mechanism by local manipulation of the material property tensors, through electromagnetic and thermal effects. 4. Creating the non-linear time-variant models for the GaN device usable in the fieldcircuit domain. This model covers the predicted material tenors and the external behavior of the switch at the same time. The external behavior of switch will change with the change in the material tensors. The model is fast and applicable in hardware in the loop (HIL) applications. 5. Linking the GaN model to the other models of the power converter’s devices. The model of power converter elements is calculated and linked together to create the overall model of the power electronics converter. This is done in three domains, field domain, circuit domain, and field-circuit domain. 6. Perform an analysis of the power converter targeting the GaN device. The analysis covers the overvoltage conditions, overcurrent conditions, harmonic loads, harmonic voltage, power quality issues, pulse loads, steady state and nominal operation. The results of the above sub-tasks will be a process for electro-thermo-magnetic modeling of the power electronics GaN device without access to material property. 3.0 Deliverables. 2015: Quarterly Progress Reports, EOY Presentation and EOY Report on the FY15 tasks (subtasks 1 to 3). 2016: Quarterly Progress Reports, EOY Presentation and EOY Report on the FY16 tasks (subtasks 4 to 6).
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N000141512398
Entities
People
- Osama Mohammed
Organizations
- Florida International University
- Office of Naval Research
- United States Navy