Development of Reliable GaN-based Vertical Power Devices
Abstract
Abstract: Development of Reliable GaN-based Vertical Power Devices GaN-Schottky-contact interfaces using different metals will be investigated utilizing advanced transmission electron microscopy (TEM) including in-situ TEM. Structural and chemical analysis will be performed on the epilayers, fresh and stressed devices—both electrically and thermally. Results will be correlated to their optical and electrical properties. This work will provide essential knowledge for the realization of a stable GaN-Schottky interface that can withstand specific high-current operation at elevated temperatures.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N000141512714
Entities
People
- Oscar D. Dubon
Organizations
- Office of Naval Research
- United States Navy
- University of California Regents