THIS GRANT IS A CONTINUATION OF N000141210976 - EXtreme Electron Concentration Oxide DEvices (EXEDE)
Abstract
The development of epitaxial oxide structures that combine unprecedented high electron densities and high dielectric strengths has the potential to create a new class of extreme powerdensity electronics for communications and energy applications. Modulation of the high carrier density in these structures will lead to next-generation plasmonics by enabling reconfigurable antennas, and plasmonic modulators. The objective of the multidisciplinary program ÒEXtreme Electron concentration oxide DEvices (EXEDE)Ó is to enable this paradigm shift in electronic and plasmonic devices by (i) the control of extreme-density, two-dimensional electron gases at polar oxide interfaces, (ii) engineering the band separation at oxide interfaces and (iii) innovative approaches to increase electron mobility and carrier velocities. To achieve these objectives, EXEDE establishes a highly interconnected multidisciplinary effort that includes sophisticated materials growth approaches, theoretical and experimental investigations of transport and optical physics and advanced device engineering. The devices and applications at the center of the project include extreme charge density field-effect transistors, charge gain devices, nanoribbon field effect transistors, plasmonic antennas and modulators. Transistor development will focus on high frequency electronic devices for communication applications and ultracompact high voltage energy efficient power switching devices. The device research program is underpinned by advancing oxide materials physics to address challenges such as their low mobility due to high phonon scattering rates. First-principles calculations and transport theory will improve understanding of transport, and will closely collaborate with experimental investigations of electron velocity and high-field transport, relevant for high-speed devices. Innovative approaches to enable efficient transport include phonon engineering and reduced dimensionality to enhance transport, band engineering to reduce effective mass, and hybrid oxide/Si structures to transfer the electrons to high mobility materials. A strong materials effort will be focused on unprecedented quality of extreme-electron concentration heterostructures, including on high mobility substrates, band offset engineering, and on exploring new oxide material systems with higher intrinsic mobility. Another significant outcome will be a knowledge base of device fabrication techniques for oxides, including contacts, etching, surface passivation, and gate dielectrics, and a clear understanding of the critical device physics. The program will significantly impact DoD capabilities not only through the demonstration of superior and new electronic and plasmonics devices that could enhance communication, signal processing, and energy conversion applications, based on a new class of electronic materials, but also by catalyzing further research in this field.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Jun 10, 2016
- Source ID
- N000141612233
Entities
People
- Susanne Stemmer
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara