Efficiency Improvements for Record 94 GHz Power Density Nitrogen-Polar Deep Recess MISHEMTs
Abstract
Short statement of WorkFunds are provided to investigate W-band GaN Nitrogen-Polar transistors. The PI is Prof. Umesh Mishra. The performer is the University of California, Santa Barbara.This is a one-year grant with total funding of $499,760This provides an initial increment of $10KThe PI investigating approaches for simultaneously advancing the transistor gain and power density for achieving high power-added-efficiency (PAE) performance in millimeter wave devices. In a prior grant, a Nitrogen Polar device have achieved a 2-3X improvement in power density compared with state of the art Ga-polar technology. A further increase in gain and PAE is likely to be realized with an understanding of the specific device physics of Nitrogen-polar transistors. This effort will investigate the improvements in gate technology in order to increase the electron velocity in the device and specifically address the role of the gate dielectric in improving the device gain. Further analysis of the current device parasitics will enable a new device geometry that will recover additional gain. Finally, pre-matched on-wafer device layouts will contribute to overall improved matching for both fundamental and harmonic components. An overall improvement of %50 in the gain over the state of the art Ga-polar devices is expected.Objective:Exploit N-polar GaN technology to simultaneously advance the transistor gain and power density in order to achieve high power-added-efficiency (PAE) in millimeter wave devices over the current state of the art for Ga-polar technology.Approach:Undertake an investigation of the specific device physics of Nitrogen-polar transistors that currently limit the gain of the devices through improved measurements and device modeling in order to identify where parasitics are stealing gain in the device. This effort will investigate the improvements in gate technology in order to increase the electron velocity in the device and specifically address the role of the gate dielectric in improving the device gain. Further analysis of the current device parasitics will enable a new device geometry that will recover additional gain. Finally, pre-matched on-wafer device layouts will contribute to overall improved matching for both fundamental and harmonic components.Overall mission and merit:Current mm-wave systems are limited by both power output and PAE particularly for space-constrained array applications where a solid state solution is required. Recent advances in N-polar devices have demonstrated considerable improvements in power output. Further advancements in our understanding of the very different device physics of N-Polar HEMTs will enable a significant increase and gain and PAE, enabling a new class of mm-wave systems for the Navy.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 08, 2016
- Source ID
- N000141612320
Entities
People
- Umesh Mishra
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara