Nanometer-scale defect microscope and spectrometer for next-generation semiconductors
Abstract
SOWFunds are provided to purchase an Aarhus 150 SPM Cryogenic variable temperature scanning probe microscope in support of wide bandgap RF electronic device research.An Aarhus 150 SPM Cryogenic variable temperature scanning probe microscope will be procured and instrumented with additional features to act as the physical probe for a scanning deep level transient optical spectroscopy system. The microscope has the capability to operate over a wide range of temperatures and conduct measurements under vacuum ambient conditions. Variable temperature measurements combined with scanning probe microscopy of electronic device surfaces will be used to characterize spatial trap concentrations along with the extraction of trap energies and capture cross-section measurements.ObjectiveThe objective of this DURIP proposal is to establish the first instrument (scanning deep level transient and optical spectrometer and microscope) that can perform site-specific and quantitative characterization of traps on the nanometer scale on device structures with the ability to extract both trap energies and local concentrations.ApproachThis DURIP is for the purchase of an Aarhus 150 SPM Cryogenic variable temperature scanning probe microscope, which will instrumented with additional features to act as the physical probe for a scanning deep level transient optical spectroscopy system. The microscope has the capability to operate over a wide range of temperatures and conduct measurements under vacuum ambient conditions. The combination of the physical probe and the temperature variable measurements will enable spatial trap concentration measurements and the extraction of trap energies and capture cross-section characterization.Merit / RelevanceGaN HEMT technology represents a 3-5-fold advance in power output and bandwidth capability in RF systems. Along with the advances in power density and bandwidth are new challenges in understanding the role of defects that previous technology avoided by limiting operating conditions and performance to achieve required system lifetimes. Exploiting the full RF capabilities of GaN technology will advance the performance of sensors and communication systems of critical interest to future Navy systems.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Aug 12, 2016
- Source ID
- N000141612641
Entities
People
- Aaron R. Arehart
Organizations
- Office of Naval Research
- Ohio State University
- United States Navy