Inert Atmosphere Transfer and Stack Station for Building High-Mobility Field-Effect Transistors from Two-Dimensional Materials
Abstract
SHORT STATEMENT OF WORK: Current research in 2D materials is severely limited by the fact that many of the 2D crystals rapidly degrade in air by reacting with oxygen and/or moisture. As a result, much of the current research revolves around a small number of highly stable monolayers such as graphene, hexagonal boron nitride (h-BN) and several semiconducting dichalcogenides (MoS2, ReS2, WSe2, etc). To overcome the poor stability of potentially relevant layered materials, such as phosphorene, NbSe2 or GaSe, a few groups have developed fabrication techniques that allow air-sensitive crystals to be handled under oxygen and moisture free conditions, which already yield promising results for black phosphorus (BP) and niobium diselenide heterostructures. By acquiring and using an inert atmosphere transfer and stack station the Florida State University will process 2D materials under inert conditions thus increasing carrier mobility which will allow studying integer or fractional quantum Hall-effect, the two-dimensional metal to insulator transition, low dimensional superconductivity, high temperature superconducting in mono-layered FeSe, and observing gate-induced (ferromagnetic) half-metallicity in monochalcogenides.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 23, 2016
- Source ID
- N000141612766
Entities
People
- Luis Balicas
Organizations
- Florida State University
- Office of Naval Research
- United States Navy