Engineered 3D Dirac Materials
Abstract
The goals of this project are to develop (i) highly-perfect, three-dimensional (3D) Dirac materialswith extremely high carrier mobilities using molecular beam epitaxy and (ii) heterostructureengineering approaches that achieve unprecedented control over their unique electronic states.The ultimate objective is a new class of electronic materials and devices that are based oncontrolling unique nontrivial topological electronic states. Using approaches such as strain,electrostatic confinement, and symmetry engineering, as well as fine-tuning of the Fermi levelusing electric field effect and modulation doping, we will achieve unprecedented control over theunique electronic states of 3D Dirac materials. These give rise to unique phenomena such asspin-Hall effects, chiral excitations, chiral magnetic currents, unusually largemagnetoresistances, topological protection against scattering, and true Fermi arcs, which cannotbe found in any other materials class. Using heterostructure engineering, which is completelynew to the field of 3D Dirac materials, we will tune between different 3D topological states, suchas Weyl semimetal, topological insulator, and quadratic band touching. The control achievedusing these approaches will enable entirely new opportunities and device paradigms forspintronics, quantum computing, sensors, chiral, and high-speed electronics.
Document Details
- Document Type
- DoD Grant Award
- Publication Date
- Sep 30, 2016
- Source ID
- N000141612814
Entities
People
- Susanne Stemmer
Organizations
- Office of Naval Research
- United States Navy
- University of California, Santa Barbara